The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2014

Filed:

May. 08, 2013
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Avraham Rozenblat, Tel Aviv, IL;

Shai Haimson, Moshav Beer Ruvia, IL;

Rotem Drori, Modiin, IL;

Maor Rotlain, Qiryat Gat, IL;

Dror Horvitz, Moshav Bear Tuvia, IL;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 23/52 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

Plug contacts may be formed with barrier layers having thicknesses of less than 50 Å in some embodiments. In one embodiment, the barrier layer may be formed by the chemical vapor deposition of diborane, forming a boron layer between a metallic contact and the surrounding dielectric and between a metallic contact and the substrate and/or substrate contact. This boron layer may be substantially pure boron and boron silicide.


Find Patent Forward Citations

Rozenblat, Avraham. (2014). Barrier layer for integrated circuit contacts (U.S. Patent No. 8810033). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8810033

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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