The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2014

Filed:

Nov. 18, 2010
Applicants:

Shai Haimson, Qiryat-Gat, IL;

Avi Rozenblat, Qiryat-Gat, IL;

Dror Horvitz, Qiryat-Gat, IL;

Maor Rotlain, Qiryat-Gat, IL;

Rotem Drori, Qiryat-Gat, IL;

Inventors:

Shai Haimson, Qiryat-Gat, IL;

Avi Rozenblat, Qiryat-Gat, IL;

Dror Horvitz, Qiryat-Gat, IL;

Maor Rotlain, Qiryat-Gat, IL;

Rotem Drori, Qiryat-Gat, IL;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close off the trench at the top during filling may be reduced in some embodiments. Material that encourages the growth of metal may be formed in the trench at the bottom, while leaving the region of the trench near the top free of such material to encourage growth upwardly from the bottom.


Find Patent Forward Citations

Haimson, Shai. (2014). Filling cavities in semiconductor structures having adhesion promoting layer in the cavities (U.S. Patent No. 8772155). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8772155

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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