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For the Inventor, By the Inventor

Ottawa, Canada

Sergiy Romanovskyy

USPTO Granted Patents = 21 

Average Co-Inventor Count = 1.2

ph-index = 5

Forward Citations = 57(Granted Patents)


Company Filing History:

goldMedal21 out of 41,047 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2009-2025

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21 patents (USPTO):Explore Patents
1. 12315552 - Word line delay interlock circuit for write operation (2025-05-27),
2. 10157664 - Memory controlling device by using multi-phase control signal and method thereof (2018-12-18),
3. 9916883 - Magnetic random access memory using current sense amplifier for reading cell data and related method (2018-03-13),
4. 9685217 - Memory device with over-refresh and method thereof (2017-06-20),
5. 9613672 - Differential current sensing scheme for magnetic random access memory (2017-04-04),
6. 9529673 - Memory device having adjustable refresh period and method of operating the same (2016-12-27),
7. 9515640 - Apparatuses and devices for bias level correction (2016-12-06),
8. 9431075 - Memory macro configuration and method (2016-08-30),
9. 9299921 - Magnetoresistive random access memory (MRAM) differential bit cell and method of use (2016-03-29),
10. 9230631 - Differential current sensing scheme for magnetic random access memory (2016-01-05),
11. 8995219 - Word line driver (2015-03-31),
12. 8995180 - Magnetoresistive random access memory (MRAM) differential bit cell and method of use (2015-03-31),
13. 8988921 - Boosting word lines (2015-03-24),
14. 8976613 - Differential current sensing scheme for magnetic random access memory (2015-03-10),
15. 8837249 - Memory macro configuration and method (2014-09-16),

Title: **Innovator Profile: Sergiy Romanovskyy**

Introduction

Sergiy Romanovskyy, based in Ottawa, Canada, is a prolific inventor with an impressive portfolio of 20 patents. His innovations primarily focus on advancements in memory control and data storage technologies, making significant contributions to the field of semiconductor engineering.

Latest Patents

Among his latest patents are two notable inventions that showcase his expertise:

1. **Memory controlling device by using multi-phase control signal and method thereof**: This patented technology involves a control circuit designed to generate a multi-pulse control signal with a predefined duration. The innovative memory cell architecture allows the output signal to be produced on a pair of bit lines during this duration, enhancing memory performance and efficiency.

2. **Magnetic random access memory using current sense amplifier for reading cell data and related method**: This invention comprises a circuit that integrates first and second reference cells alongside a current sense amplifier. It ensures accurate data retrieval from the first and second reference cells, effectively improving the reliability of logic value storage and access.

Career Highlights

Sergiy currently holds a key position at Taiwan Semiconductor Manufacturing Company, Ltd., a leader in the semiconductor industry. His work not only reflects his technical prowess but also his dedication to pushing the boundaries of memory technology. Throughout his career, Sergiy has consistently contributed innovative solutions that address complex challenges in data storage and processing.

Collaborations

Sergiy has collaborated with talented professionals in his field, including colleagues Muhammad Nummer and Cormac Michael O'Connell. Together, they have worked on groundbreaking projects that harness their collective expertise to enhance semiconductor technologies.

Conclusion

Sergiy Romanovskyy's career is marked by his substantial contributions to memory control and semiconductor innovation. With 20 patents to his name, his work exemplifies the spirit of invention driving advancements in technology today. As he continues to push the envelope in his field, Sergiy remains a pivotal figure in the world of inventors and innovations.

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