The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
Feb. 24, 2017
Magnetic random access memory using current sense amplifier for reading cell data and related method
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventor:
Sergiy Romanovskyy, Ottawa, CA;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01); G11C 11/16 (2006.01); G11C 7/14 (2006.01); G11C 11/4091 (2006.01); G11C 7/06 (2006.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 7/065 (2013.01); G11C 7/14 (2013.01); G11C 11/22 (2013.01); G11C 11/4091 (2013.01); G11C 2207/063 (2013.01);
Abstract
A circuit includes a first and second reference cells and a current sense amplifier. The first and second reference cells are configured to store a first and a second logic values, respectively. The current sense amplifier is configured to couple the first reference cell to a first node of the current sense amplifier, and couple the second reference cell to a second node of the current sense amplifier for reading bits stored in the first reference cell and the second reference cell.