The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Mar. 05, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventor:
Sergiy Romanovskyy, Ottawa, CA;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 43/08 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); H01L 43/02 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G11C 11/00 (2013.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); H01L 43/02 (2013.01); G11C 11/5607 (2013.01);
Abstract
A magnetoresistive random access memory (MRAM) bit cell includes a first magnetic tunnel junction (MTJ) connected to a first data line. The MRAM bit cell further includes a second MTJ connected to a second data line. The MRAM bit cell further includes a pass gate assembly connected to the first MTJ and the second MTJ, wherein the pass gate assembly comprises a plurality of transistors, and each transistor of the plurality of transistors is configured to selectively connect the first MTJ and the second MTJ to a driving line.