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For the Inventor, By the Inventor

Suwon-si, South Korea

Seogoo Kang

USPTO Granted Patents = 14 

Average Co-Inventor Count = 4.6

ph-index = 1

Forward Citations = 9(Granted Patents)


Location History:

  • Suwon-si, KR (2021 - 2023)
  • Seoul, KR (2022 - 2023)

Company Filing History:

goldMedal14 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2021-2025

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14 patents (USPTO):Explore Patents
1. 12471285 - Semiconductor device having selection line stud connected to string selection line (2025-11-11),
2. 12439602 - Semiconductor device including data storage pattern with improved retention characteristics (2025-10-07),
3. 12268004 - Semiconductor devices with string select channel layer (2025-04-01),
4. 11792994 - Three-dimensional memory device including a string selection line gate electrode having a silicide layer (2023-10-17),
5. 11729972 - 3D memory devices (2023-08-15),
6. 11716851 - Semiconductor memory devices (2023-08-01),
7. 11637117 - Semiconductor device having selection line stud connected to string selection line (2023-04-25),
8. 11594544 - Semiconductor devices with string select channel for improved upper connection (2023-02-28),
9. 11552098 - Semiconductor device including data storage pattern with improved retention characteristics (2023-01-10),
10. 11515322 - Semiconductor devices (2022-11-29),
11. 11444098 - Vertical non-volatile memory devices and methods of programming the same (2022-09-13),
12. 11411078 - Semiconductor devices including dummy patterns for discharging effects (2022-08-09),
13. 11374017 - Three-dimensional memory device including a string selection line gate electrode having a silicide layer (2022-06-28),
14. 11114460 - Semiconductor memory devices (2021-09-07),

Title: Seogoo Kang: Innovator in Three-Dimensional Memory Technology

Introduction: Seogoo Kang is a prominent inventor based in Suwon-si, South Korea, renowned for his contributions to the field of memory technologies. With an impressive portfolio of 11 patents, Kang's innovative work primarily focuses on three-dimensional memory devices, a vital aspect of modern semiconductor technology.

Latest Patents: Seogoo Kang's latest patents include a design for a three-dimensional memory device featuring a string selection line gate electrode that incorporates a silicide layer. This innovative memory device comprises a substrate, a cell stack, a string selection line gate electrode, and a vertical channel structure designed to enhance performance and efficiency. Additionally, Kang has also developed a semiconductor device that includes a channel structure complete with plurality gate electrodes and a specialized gate insulating layer. These advancements signify a substantial leap in semiconductor fabrication and memory performance.

Career Highlights: Working at Samsung Electronics Co., Ltd., Seogoo Kang has played a pivotal role in advancing the capabilities of three-dimensional memory technology. His efforts contribute significantly to the progression of semiconductor devices, ensuring that they meet the demands of the ever-evolving digital landscape.

Collaborations: Throughout his career, Seogoo Kang has collaborated with esteemed professionals in the field, including Jeehoon Han and Kohji Kanamori. These partnerships highlight the collaborative spirit inherent in technological innovation, as Kang works alongside other talented individuals to push the boundaries of memory technology.

Conclusion: Seogoo Kang's dedication to enhancing three-dimensional memory solutions has solidified his status as a leading inventor in the semiconductor industry. With his continuous innovations and collaborations, he remains instrumental in shaping the future of memory devices, driving advancements that will impact various technology sectors for years to come.

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