The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Apr. 09, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Younghwan Son, Hwaseong-si, KR;

Seogoo Kang, Seoul, KR;

Jeehoon Han, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); G11C 8/14 (2006.01); G11C 7/18 (2006.01); H01L 29/423 (2006.01); H01L 29/792 (2006.01); H10B 43/10 (2023.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 7/18 (2013.01); G11C 8/14 (2013.01); H01L 29/4234 (2013.01); H01L 29/7926 (2013.01); H10B 43/10 (2023.02); H01L 29/40117 (2019.08);
Abstract

A semiconductor device is disclosed. The semiconductor device includes a channel structure on a substrate and extending in a first direction perpendicular to a top surface of the substrate; a plurality of gate electrodes on the substrate and spaced apart from one another in the first direction on a sidewall of the channel structure; and a gate insulating layer between each of the plurality of gate electrodes and the channel structure, wherein the channel structure includes a body gate layer extending in the first direction; a charge storage structure surrounding a sidewall of the body gate layer; and a channel layer surrounding sidewall of the charge storage structure.


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