The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

Jul. 29, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyojoon Ryu, Hwaseong-si, KR;

Younghwan Son, Hwaseong-si, KR;

Seogoo Kang, Seoul, KR;

Jesuk Moon, Hwaseong-si, KR;

Junghoon Jun, Hwaseong-si, KR;

Kohji Kanamori, Seongnam-si, KR;

Jeehoon Han, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); H01L 27/11573 (2017.01); H01L 27/11565 (2017.01);
U.S. Cl.
CPC ...
H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor device includes; gate layers stacked on a substrate, a channel layer extending through the gate layers, a string select gate layer disposed on the channel layer and a string select channel layer extending through the string select gate layer to contact the channel layer. The string select channel layer includes a first portion below the string select gate layer including a first protruding region, a second portion extending through the string select gate layer, and a third portion above the string select gate layer including a second protruding region.


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