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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11792994 B1

PDFFull Text
Date of Patent:
Oct. 17, 2023

Filed:

Apr. 20, 2022

Three-dimensional memory device including a string selection line gate electrode having a silicide layer

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kohji Kanamori, Seongnam-si, KR;

Seogoo Kang, Seoul, KR;

Jongseon Ahn, Seongnam-si, KR;

Jeehoon Han, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

F. CHAU & ASSOCIATES, LLC

Primary Examiner:

Hsien Ming Lee

Int. Cl.
CPC ...
H10B 43/35 (2023.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/41 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/35 (2023.02); H01L 21/28052 (2013.01); H01L 29/4933 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/41 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02);
Abstract

A three-dimensional memory device is provided. The three-dimensional memory device may include a substrate, a cell stack, a string selection line gate electrode, a lower vertical channel structure, an upper vertical channel structure, and a bit line. The string selection line gate electrode may include a lower string selection line gate electrode and an upper string selection line gate electrode formed on an upper surface of the lower string selection line gate electrode. The lower string selection line gate electrode may include N-doped poly-crystalline silicon. The upper string selection line gate electrode may include silicide.

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