Ome, Japan

Satoshi Iwahashi


Average Co-Inventor Count = 3.5

ph-index = 3

Forward Citations = 138(Granted Patents)


Company Filing History:


Years Active: 2004-2006

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6 patents (USPTO):Explore Patents

Title: Satoshi Iwahashi: Innovator in Semiconductor Technology

Introduction

Satoshi Iwahashi is a prominent inventor based in Ome, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on enhancing the performance and efficiency of integrated circuit devices.

Latest Patents

Iwahashi's latest patents include a novel semiconductor integrated circuit device that features memory circuits, high-speed memories, and large memory capacity memory circuits. This invention aims to speed up and facilitate timing settings. The device is equipped with first amplifier circuits that include first MOSFETs of the first conductivity type. These circuits are designed to maintain an off state under precharge voltages supplied to the bit lines, allowing for efficient operation of memory cells. Additionally, he has developed a semiconductor device that enhances symmetry in the layout of diffusion and wiring layers, optimizing the manufacturing process and reducing variations.

Career Highlights

Throughout his career, Satoshi Iwahashi has worked with notable companies such as Hitachi, Ltd. and Renesas Technology Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Iwahashi has collaborated with esteemed colleagues, including Keiichi Higeta and Shigeru Nakahara. These partnerships have further enriched his contributions to the field.

Conclusion

Satoshi Iwahashi's innovative work in semiconductor technology has led to significant advancements in integrated circuit devices. His patents reflect a commitment to improving efficiency and performance in this critical area of technology.

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