Enter inventor name

Satoru Mayuzumi

USPTO Granted Patents = 20 (Patent Applications = 3)

Average Co-Inventor Count = 1.6

ph-index = 5

Forward Citations = 61(Granted Patents)

Location History:

Boise, ID (US) (2014 - 2019)
Tokyo, JP (2001 - 2024)

Company Filing History:

Nec Electronics Corporation

patents

2 out of 2,895

Sony Semiconductor Solutions Corporation

patents

4. 2 out of 38,002

Micron Technology Incorporated

Sony Group Corporation

patents

Years Active: 2001-2024

Loading Chart...

20 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12087858 - Semiconductor device including stress application layer (2024-09-10),

2. 10868177 - Semiconductor device and manufacturing method thereof (2020-12-15),

3. 10854751 - Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions (2020-12-01),

4. 10535769 - Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions (2020-01-14),

5. 10269961 - Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions (2019-04-23),

6. 10199227 - Method for fabricating a metal high-k gate stack for a buried recessed access device (2019-02-05),

7. 9947790 - Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions (2018-04-17),

8. 9876109 - Transistors having strained channel under gate in a recess (2018-01-23),

9. 9680007 - Method for fabricating a metal high-k gate stack for a buried recessed access device (2017-06-13),

10. 9640656 - Transistors having strained channel under gate in a recess (2017-05-02),

11. 9601622 - Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions (2017-03-21),

12. 9337305 - Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions (2016-05-10),

13. 9337042 - Method for fabricating a metal high-k gate stack for a buried recessed access device (2016-05-10),

14. 9153663 - Semiconductor device having a stress-inducing layer between channel region and source and drain regions (2015-10-06),

15. 8980713 - Method for fabricating a metal high-k gate stack for a buried recessed access device (2015-03-17),

Title: Innovations in Semiconductor Technology: The Contributions of Satoru Mayuzumi

Introduction: Satoru Mayuzumi, a prominent inventor based in Tokyo, Japan, has made significant strides in the field of semiconductor technology. With 20 patents to his name, he has played a crucial role in advancing the capabilities of semiconductor devices. His work focuses on innovative designs that enhance the performance and efficiency of electronic components.

Latest Patents: Among his latest innovations are two notable patents concerning semiconductor devices equipped with stress application layers. The first patent details a semiconductor device that incorporates a field-effect transistor, featuring a semiconductor substrate with a channel forming region, a gate insulating film, and a gate electrode. This design includes a first stress application layer that applies stress to the channel forming region, as well as a second stress application layer that applies a distinct stress to improve the device's performance. The second patent mirrors the first, further solidifying his contributions to the manufacturing methods of these advanced semiconductor devices.

Career Highlights: Satoru Mayuzumi's professional journey includes significant tenures at major companies such as Sony Corporation and NEC Electronics Corporation. His experience at these leading firms has equipped him with valuable insights and expertise that he has applied to his inventive works. His innovations have not only propelled his career but have also contributed to the technological advancements in the semiconductor industry.

Collaborations: Throughout his career, Mayuzumi has collaborated with notable figures in the technological field, including Hitoshi Wakabayashi and Mark Fischer. These partnerships have fostered an environment of innovation and creativity, further expanding the impact of his inventions.

Conclusion: Satoru Mayuzumi's dedication to the semiconductor industry and his impressive portfolio of patents underscore his status as a leading innovator in this critical field. With his continuous contributions and collaborations, he is set to influence the future of semiconductor technology significantly. As the industry evolves, so too will the innovations stemming from the work of inventors like Mayuzumi, paving the way for more advanced electronic devices.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com