The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Mar. 10, 2015
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/265 (2006.01); H01L 27/108 (2006.01); H01L 21/283 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28008 (2013.01); H01L 21/265 (2013.01); H01L 21/283 (2013.01); H01L 21/28079 (2013.01); H01L 21/28088 (2013.01); H01L 27/108 (2013.01); H01L 27/10876 (2013.01); H01L 27/10891 (2013.01); H01L 29/4236 (2013.01); H01L 29/66545 (2013.01); H01L 29/66621 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/665 (2013.01);
Abstract
A method for fabricated a buried recessed access device comprising etching a plurality of gate trenches in a substrate, implanting and activating a source/drain region in the substrate, depositing a dummy gate in each of the plurality of gate trenches, filling the plurality of gate trenches with an oxide layer, removing each dummy gate and depositing a high-K dielectric in the plurality of gate trenches, depositing a metal gate on the high-K dielectric in each of the plurality of gate trenches, depositing a second oxide layer on the metal gate and forming a contact on the source/drain.