The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Nov. 13, 2020
Sony Group Corporation, Tokyo, JP;
Satoru Mayuzumi, Tokyo, JP;
Sony Group Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a field effect transistor including: a semiconductor substrate including a channel forming region; a gate insulating film formed at the channel forming region on the semiconductor substrate; a gate electrode formed over the gate insulating film; a first stress application layer formed over the gate electrode and applying stress to the channel forming region; a source/drain region formed on a surface layer portion of the semiconductor substrate at both sides of the gate electrode and the first stress application layer; and a second stress application layer formed over the source/drain region in a region other than at least a region of the first stress application layer and applying stress different from the first stress application layer to the channel forming region.