Sang Hwan Kim

Title: Innovations of Sang Hwan Kim

Introduction

Sang Hwan Kim is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of memory devices, holding a total of 12 patents. His work focuses on enhancing the functionality and efficiency of memory technology.

Latest Patents

One of his latest patents is a memory device and method of operating with different input/output modes. This invention includes a plurality of pages, a peripheral circuit, and control logic. The peripheral circuit is designed to receive commands, addresses, and data from an external controller to program a selected page. It generates internal input data based on the input mode for the command, address, and data. The control logic determines whether to generate internal input data based on the data and controls the peripheral circuit for programming operations. Another notable patent involves a memory device that features a first pad, a second pad, and a double data rate (DDR) test controller. The first pad receives a write enable signal, while the second pad receives a data strobe signal. The DDR test controller outputs internal signals based on the received write enable signal during DDR test operations.

Career Highlights

Sang Hwan Kim has worked with notable companies such as SK Hynix Inc. and the Korea Advanced Institute of Science and Technology. His experience in these organizations has allowed him to develop innovative solutions in memory technology.

Collaborations

He has collaborated with talented individuals in his field, including Koeng Su Lim and Seong Won Kwon. Their joint efforts have contributed to advancements in memory device technology.

Conclusion

Sang Hwan Kim's contributions to memory technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to shape the future of memory devices.