Nara, Japan

Ryosuke Okawa

This inventor holds 28 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Devices. Top assignees: Nuvoton Technology Corporation Japan, Panasonic Semiconductor Solutions Co., Ltd., Panasonic Intellectual Property Management Co., Ltd.. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryosuke Okawa. Retrieved from https://idiyas.com/inventor/ryosuke-okawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 28 

% Patents Active = 96.4

Average Co-Inventor Count = 4.6

ph-index = 5

Forward Citations = 143(Granted Patents)


Location History:

  • Nara-ken, JP (2021)
  • Nara, JP (2018 - 2024)

Company Filing History:


Years Active: 2018-2026

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Areas of Expertise:
Semiconductor Device
Semiconductor Module
Packaged Semiconductor
Metal Oxide Transistors
3D Integration
Thermal Management
TSV Interconnects
Device Architecture
Circuit Design
Power Efficiency
High-Speed Performance
28 patents (USPTO):Explore Patents

Title: The Innovative Mind of Ryosuke Okawa: A Pioneer in Semiconductor Technology

Introduction: Ryosuke Okawa, an accomplished inventor based in Nara, Japan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 27 patents, Okawa has established himself as a leading innovator dedicated to advancing electronic device performance and efficiency.

Latest Patents: Okawa's latest patents showcase his expertise in semiconductor devices. One notable patent describes a vertical field-effect transistor that features a first gate trench and a second gate trench, with the second trench being deeper than the first. This design improves the functionality of semiconductor devices by allowing the first and second gate conductors to maintain the same potential, enhancing device performance.

Another significant patent focuses on a semiconductor device that integrates a low-concentration impurity layer, a body region, a gate trench, a gate insulating film, and a gate conductor. This innovative design optimizes the semiconductor's body region, enabling it to incorporate both high and low impurity concentration zones, which are alternately present, thereby improving operational capabilities.

Career Highlights: Okawa has built his career at notable companies, including Nuvoton Technology Corporation Japan and Panasonic Semiconductor Solutions Co., Ltd. His experience in these prominent organizations has played a crucial role in his development as an inventive mind in the semiconductor domain.

Collaborations: Throughout his career, Okawa has collaborated with esteemed professionals such as Kazuma Yoshida and Toshikazu Imai. These collaborations have fostered a spirit of innovation and teamwork, resulting in advanced research and development in semiconductor technology.

Conclusion: Ryosuke Okawa exemplifies the spirit of innovation with his substantial contributions to semiconductor devices. Through his extensive patent portfolio and collaboration with industry experts, he continues to push the boundaries of technology, ensuring that his inventions pave the way for the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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