The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Jan. 18, 2023
Nuvoton Technology Corporation Japan, Kyoto, JP;
Michiya Otsuji, Shiga, JP;
Hironao Nakamura, Osaka, JP;
Ryosuke Okawa, Nara, JP;
Eiji Yasuda, Osaka, JP;
NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto, JP;
Abstract
A semiconductor device includes a vertical field-effect transistor including: a low-concentration impurity layer; a body region; a gate trench; a gate insulating film; and a gate conductor. The body region includes: a first body portion containing an active region and has a constant depth; and a second body portion adjacent to the first body portion and includes a zone that has a limited length in a second direction orthogonal to the first direction along the top surface of the low-concentration impurity layer, and has a constant depth at a position shallower than the constant depth of the first body portion. The second body portion includes a portion in which a region having relatively high concentration of an impurity and a region having relatively low concentration of an impurity are alternately and periodically present in the first direction in a cross-sectional view of a plane orthogonal to the second direction.