The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Jul. 09, 2025
Nuvoton Technology Corporation Japan, Kyoto, JP;
Nuvoton Technology Corporation Japan, Kyoto, JP;
Abstract
A semiconductor device includes a vertical metal-oxide semiconductor (MOS) transistor that includes: first trenches provided from an upper surface of a low-concentration impurity layer and penetrating through a body region, and extending in a first direction; and second trenches provided from the upper surface of the low-concentration impurity layer and penetrating through the body region to a depth deeper than the depth of the first trenches, and extending in the first direction. The first trenches and the second trenches are alternately disposed in a second direction, first conductors connected to a gate electrode are provided inside the first trenches and in upper portions inside the second trenches, second conductors connected to the source electrode are provided in lower portions inside the second trenches, and a pitch between the second conductors is twice a pitch between the first conductors in the second direction.