The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Feb. 10, 2023
Nuvoton Technology Corporation Japan, Kyoto, JP;
NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto, JP;
Abstract
A semiconductor device includes a vertical field-effect transistor including: a first gate trench and a second gate trench extending in a first direction, the second gate trench being deeper than the first trench; a first gate insulating film and a first gate conductor inside the first gate trench; and a second gate insulating film and a second gate conductor inside the second gate trench. The first gate conductor and the second gate conductor have the same potential. When a total number of first gate trenches is denoted by n, a total number of second gate trenches is at least 2 and at most n+1. In a second direction orthogonal to the first direction, the second gate trench is disposed at each of farthest ends of a region in which the first gate trenches and the second gate trenches are disposed.