The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

Oct. 05, 2021
Applicant:

Nuvoton Technology Corporation Japan, Nagaokakyo, JP;

Inventors:

Ryosuke Okawa, Nara, JP;

Toshikazu Imai, Hyogo, JP;

Kazuma Yoshida, Kyoto, JP;

Tsubasa Inoue, Osaka, JP;

Takeshi Imamura, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 23/538 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 23/5386 (2013.01); H01L 27/088 (2013.01);
Abstract

A semiconductor device includes a first transistor disposed in a first region of a semiconductor layer and a second transistor disposed in a second region of the semiconductor layer, and includes, on the surface of the semiconductor layer, first source pads, a first gate pad, second source pads, and a second gate pad. In the plan view of the semiconductor layer, the first and second transistors are aligned in a first direction; the first gate pad is disposed such that none of the first source pads is disposed between the first gate pad and a side parallel to the first direction and located closest to the first gate pad; and the second gate pad is disposed such that none of the second source pads is disposed between the second gate pad and a side parallel to the first direction and located closest to the second gate pad.


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