Ryan L Meyer

This inventor holds 14 USPTO granted patents and 2 published patent applications, primarily in Memory Array Technology. Top assignee: Micron Technology Incorporated. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryan L Meyer. Retrieved from https://idiyas.com/inventor/ryan-l-meyer

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 14 (Patent Applications = 2)

% Patents Active = 92.9

Average Co-Inventor Count = 7.5

ph-index = 3

Forward Citations = 87(Granted Patents)

Company Filing History:

14 out of 39,325

Micron Technology Incorporated

patents

Years Active: 2018-2026

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Areas of Expertise:

Memory Arrays

Integrated Circuitry

Silicon Structures

Programmable Charge Storage

Elevationally-Extending Strings

Insulative Tiers

Wordline Tiers

Storage Nodes

Memory Cells

Trench Structures

Nitrogen Materials

14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12575120 - Depositing a storage node (2026-03-10),

2. 11937429 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2024-03-19),

3. 11792991 - Memory arrays and methods used in forming a memory array comprising strings of memory cells (2023-10-17),

4. 11563011 - Integrated circuitry, memory circuitry, method used in forming integrated circuitry, and method used in forming memory circuitry (2023-01-24),

5. 11244955 - Memory arrays and methods used in forming a memory array comprising strings of memory cells (2022-02-08),

6. 11239252 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2022-02-01),

7. 11094627 - Methods used in forming a memory array comprising strings of memory cells (2021-08-17),

8. 10727242 - Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor (2020-07-28),

9. 10720446 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2020-07-21),

10. 10586807 - Arrays of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stacks (2020-03-10),

11. 10388665 - Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stack (2019-08-20),

12. 10263007 - Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor (2019-04-16),

13. 10157933 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2018-12-18),

14. 10014309 - Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor (2018-07-03),

Title: The Innovative Contributions of Ryan L Meyer

Introduction

Ryan L Meyer is a prominent inventor based in Boise, Idaho, known for his significant contributions to the field of memory technology. With a total of 13 patents to his name, Meyer has made substantial advancements in integrated structures and memory arrays.

Latest Patents

Meyer’s latest patents include innovative designs for integrated structures that incorporate materials containing silicon, nitrogen, and at least one of carbon, oxygen, boron, and phosphorus. One of his notable inventions features an integrated structure with vertically-stacked conductive levels alternating with dielectric levels. This design includes a layer over the conductive levels that comprises silicon, nitrogen, and one or more of the aforementioned materials. In some embodiments, these vertically-stacked conductive levels serve as wordline levels within a NAND memory array. Additionally, Meyer has developed memory arrays and methods for forming a memory array that consists of strings of memory cells. These arrays include laterally-spaced memory blocks with vertical stacks of alternating insulative and conductive tiers, enhancing the efficiency and performance of memory technology.

Career Highlights

Meyer is currently employed at Micron Technology Incorporated, a leading company in the semiconductor industry. His work focuses on advancing memory technology, which is crucial for modern computing applications. His innovative designs have the potential to significantly improve the performance and efficiency of memory devices.

Collaborations

Meyer collaborates with talented individuals in his field, including coworkers Justin B Dorhout and Kunal R Parekh. Their combined expertise contributes to the development of cutting-edge technologies in memory systems.

Conclusion

Ryan L Meyer is a key figure in the field of memory technology, with a strong portfolio of patents that reflect his innovative spirit. His work at Micron Technology Incorporated continues to push the boundaries of what is possible in memory design and functionality.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

2 patents pending: