The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Oct. 25, 2019
Micron Technology, Inc., Boise, ID (US);
Vladimir Machkaoutsan, Wezemaal, BE;
Pieter Blomme, Heverlee, BE;
Emilio Camerlenghi, Bergamo, IT;
Justin B. Dorhout, Boise, ID (US);
Jian Li, Boise, ID (US);
Ryan L. Meyer, Boise, ID (US);
Paolo Tessariol, Arcore, IT;
Micron Technology, Inc., Boise, ID (US);
Abstract
A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. First dummy pillars in the memory blocks extend through at least a majority of the insulative tiers and the conductive tiers through which the channel-material strings extend. Second dummy pillars are laterally-between and longitudinally-spaced-along immediately-laterally-adjacent of the memory blocks. The second dummy pillars extend through at least a majority of the insulative tiers and the conductive tiers through which the operative channel-material strings extend laterally-between the immediately-laterally-adjacent memory blocks. Other embodiments, including method, are disclosed.