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For the Inventor, By the Inventor

Santa Clara, CA, United States of America

Rustom F Irani

This inventor holds 5 USPTO granted patents. Top assignees: Waferscale Integration, Inc., American Microsystems, Inc.. Active years: 1992-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rustom F Irani. Retrieved from https://idiyas.com/inventor/rustom-f-irani

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 5

% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 3

Forward Citations = 80(Granted Patents)


Company Filing History:

goldMedal5 out of 54 
 
Waferscale Integration, Inc.
 patents
silverMedal2 out of 106 
 
American Microsystems, Inc.
 patents
where one patent can have more than one assignee

Years Active: 1992-1999

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5 patents (USPTO):Explore Patents
1. 5910016 - Scalable EPROM array (1999-06-08),
2. 5838046 - Operating method for ROM array which minimizes band-to-band tunneling (1998-11-17),
3. 5683925 - Manufacturing method for ROM array with minimal band-to-band tunneling (1997-11-04),
4. 5623443 - Scalable EPROM array with thick and thin non-field oxide gate insulators (1997-04-22),
5. 5151375 - EPROM virtual ground array (1992-09-29),

Title: The Innovative Mind of Rustom F Irani

Introduction

Rustom F Irani is an accomplished inventor based in Santa Clara, CA, renowned for his significant contributions to the field of memory technologies. With a total of five patents to his name, Irani has demonstrated a commitment to advancing the capabilities and efficiency of electronic memory systems.

Latest Patents

Among Irani's most recent innovations are two pivotal patents related to electrically programmable read-only memory (EPROM) arrays. The first patent introduces a scalable EPROM array that features self-aligned thick oxide isolation units, enhancing the manufacturing process and efficiency of EPROM arrays. This technology comprises EPROM areas with cells and control areas, utilizing a unique design of polysilicon strips and oxide elements. The second patent revolves around an operating method for a read-only memory (ROM) array that minimizes band-to-band tunneling. This innovation presents a sophisticated design that regulates the threshold voltage of turned-off transistors to optimize energy efficiency and performance.

Career Highlights

Rustom F Irani has held prominent positions in notable companies, including Waferscale Integration, Inc. and American Microsystems, Inc. His work across these organizations has underpinned his innovative advancements in memory technology, allowing him to pioneer methods that have impacted the electronics industry.

Collaborations

Throughout his career, Irani has had the privilege of collaborating with talented professionals, including Reza Kazerounian and Boaz Eitan. These partnerships have fostered a rich exchange of ideas and technical expertise, contributing to the successful development of cutting-edge technologies.

Conclusion

Rustom F Irani exemplifies the spirit of innovation in the field of memory technology. His groundbreaking patents and collaborative efforts underscore his role as a leading inventor, shaping the future of electronic memory solutions. Through his work, Irani continues to inspire future generations of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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