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For the Inventor, By the Inventor

Boise, ID, United States of America

Russell L Meyer

USPTO Granted Patents = 13 

 

Average Co-Inventor Count = 3.5

ph-index = 4

Forward Citations = 63(Granted Patents)


Company Filing History:

goldMedal12 out of 38,002 
 
Micron Technology Incorporated
 patents
silverMedal1 out of 54,781 
 
Intel Corporation
 patents

Years Active: 2004-2024

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13 patents (USPTO):Explore Patents
1. 12100447 - Self-selecting memory array with horizontal access lines (2024-09-24),
2. 11798620 - Apparatuses including multi-level memory cells and methods of operation of same (2023-10-24),
3. 11696454 - Three dimensional memory arrays (2023-07-04),
4. 11482280 - Apparatuses including multi-level memory cells and methods of operation of same (2022-10-25),
5. 11404117 - Self-selecting memory array with horizontal access lines (2022-08-02),
6. 10998379 - Three dimensional memory arrays (2021-05-04),
7. 10622558 - Non-volatile memory cell structures including a chalcogenide material having a narrowed end and a three-dimensional memory device (2020-04-14),
8. 10593399 - Self-selecting memory array with horizontal bit lines (2020-03-17),
9. 10490602 - Three dimensional memory arrays (2019-11-26),
10. 10446226 - Apparatuses including multi-level memory cells and methods of operation of same (2019-10-15),
11. 7120073 - Integrated circuit devices having reducing variable retention characteristics (2006-10-10),
12. 6898138 - Method of reducing variable retention characteristics in DRAM cells (2005-05-24),
13. 6723618 - Methods of forming field isolation structures (2004-04-20),

Title: Russell L Meyer: Innovator in Memory Technology

Introduction

Russell L Meyer is an accomplished inventor based in Boise, Idaho, known for his significant contributions to memory technology. With a remarkable portfolio of 13 patents, he has been instrumental in advancing the field, particularly through innovative approaches in memory arrays and cell design.

Latest Patents

His latest patents include the creation of a self-selecting memory array with horizontal access lines. This invention describes methods, systems, and devices designed to improve memory arrays by incorporating first and second access lines that extend in different directions. Each intersection within this memory array contains multiple memory cells that interact with self-selecting materials, enhancing the efficiency and functionality of memory storage. Additionally, he has developed apparatuses that include multi-level memory cells. These memory cells combine a memory element and a selector device, enabling data storage in both components. The programming of these cells occurs through the application of write pulses with varying polarities and magnitudes, allowing for the encoding of different logic states.

Career Highlights

Russell's innovation journey includes significant tenures at leading companies such as Micron Technology Incorporated and Intel Corporation. His work at these companies has placed him at the forefront of memory technology advancements, where he has been involved in various high-impact projects and research initiatives.

Collaborations

Throughout his career, Meyer has collaborated with notable professionals, including Lorenzo Fratin and Fabio Pellizzer. These partnerships have fostered an environment of creativity and knowledge exchange, further contributing to his innovative outputs.

Conclusion

Russell L Meyer exemplifies the spirit of innovation through his dedication to developing advanced memory technologies. With a rich background and a proven track record of patents, he continues to influence the industry with his cutting-edge inventions, paving the way for the future of memory technologies.

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