The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Mar. 30, 2018
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Lorenzo Fratin, Buccinasco, IT;
Russell L. Meyer, Boise, ID (US);
Fabio Pellizzer, Cornate d'Adda, IT;
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1233 (2013.01); H01L 27/249 (2013.01); H01L 45/04 (2013.01); H01L 45/1226 (2013.01); H01L 45/1246 (2013.01); H01L 45/1253 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01); H01L 45/1616 (2013.01);
Abstract
A memory cell can include a chalcogenide material having a narrowed end. A conductive material can be positioned at the narrowed end of the chalcogenide material. A dielectric barrier layer can be disposed between the conductive material and the narrowed end of the chalcogenide material. A dielectric spacer material can be positioned along a narrowed segment of the chalcogenide material.