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Boise, ID, United States of America

Russell C Zahorik

USPTO Granted Patents = 41

Average Co-Inventor Count = 1.8

ph-index = 14

Forward Citations = 2,684(Granted Patents)

Location History:

late of Boise, ID (US) (2001 - 2004)
Boise, ID (US) (1993 - 2012)

Company Filing History:

38 out of 37,950

Micron Technology Incorporated

Round Rock Research, LLC

1 out of 832,812

Other

patents

Years Active: 1993-2012

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Areas of Expertise:

Phase Change Memory

Chalcogenide Memories

Semiconductor Devices

Integrated Circuit Memory

Metal Fill Techniques

Wafer Alignment Marks

Antireflective Coatings

Chemical-Mechanical Polishing

Memory Cell Fabrication

Conductive Path Formation

X-Point Memory Cells

Reflectance Calibration

41 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8264061 - Phase change memory cell and devices containing same (2012-09-11),

2. 8053371 - Apparatus and methods for selective removal of material from wafer alignment marks (2011-11-08),

3. 7838416 - Method of fabricating phase change memory cell (2010-11-23),

4. 7687881 - Small electrode for phase change memories (2010-03-30),

5. 7494922 - Small electrode for phase change memories (2009-02-24),

6. 7273809 - Method of fabricating a conductive path in a semiconductor device (2007-09-25),

7. 6984874 - Semiconductor device with metal fill by treatment of mobility layers including forming a refractory metal nitride using TMEDT (2006-01-10),

8. 6889698 - Apparatus for selective removal of material from wafer alignment marks (2005-05-10),

9. 6812139 - Method for metal fill by treatment of mobility layers (2004-11-02),

10. 6797612 - Method of fabricating a small electrode for chalcogenide memory cells (2004-09-28),

11. 6777705 - X-point memory cell (2004-08-17),

12. 6690077 - Antireflective coating and field emission display device, semiconductor device and wiring line comprising same (2004-02-10),

13. 6635951 - Small electrode for chalcogenide memories (2003-10-21),

14. 6610610 - Methods for selective removal of material from wafer alignment marks (2003-08-26),

15. 6534368 - Integrated circuit memory cell having a small active area and method of forming same (2003-03-18),

Sure, I can definitely help you with that. Here is the article about inventor Russell C Zahorik:

Title: The Innovative Mind of Russell C Zahorik

Introduction:

Russell C Zahorik, a prolific inventor based in Boise, ID (US), has made significant contributions to the field of technology with his impressive portfolio of 41 patents.

Latest Patents:

One of his latest patents includes the groundbreaking "Phase change memory cell and devices containing the same," which revolutionizes memory array technology by introducing elements with sublithographic lateral dimensions. Additionally, Zahorik's patent on "Apparatus and methods for selective removal of material from wafer alignment marks" showcases his expertise in semiconductor manufacturing processes.

Career Highlights:

Throughout his career, Zahorik has worked at prominent companies such as Micron Technology Incorporated and Round Rock Research, LLC, where he has been instrumental in driving innovation and technological advancements.

Collaborations:

Zahorik has collaborated with esteemed colleagues such as Guy F Hudson and Todd A Dobson, further enhancing his ability to bring cutting-edge ideas to fruition.

Conclusion:

In conclusion, Russell C Zahorik's remarkable contributions to the field of technology through his patents and collaborations underscore his status as a visionary inventor shaping the future of innovation.

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