The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2004
Filed:
Mar. 17, 2000
Everett A. McTeer, Boise, ID (US);
Russell C. Zahorik, Boise, ID (US);
Scott G. Meikle, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Titanium aluminum nitrogen (“Ti—Al—N”) is deposited onto a semiconductor substrate area to serve as an antireflective coating. For wiring line fabrication processes, the Ti—Al—N layer serves as a cap layer which prevents unwanted reflection of photolithography light (i.e., photons) during fabrication. For field emission display devices (FEDs), the Ti—Al—N layer prevents light originating at the display screen anode from penetrating transistor junctions that would hinder device operation. For the wiring line embodiment an aluminum conductive layer and a titanium-aluminum underlayer are formed beneath the antireflective cap layer. The Ti—Al underlayer reduces the shrinkage which occurs in the aluminum conductive layer during heat treatment.