The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2003
Filed:
Jun. 14, 2001
Russell C. Zahorik, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method for manufacturing a memory device having a plurality of memory cells. Each memory cell has a non-volatile resistive memory element with a small active area. A plurality of memory cells are formed at selected locations of at least a portion of a semiconductor wafer. To form the memory cells, a lower electrode layer and a memory material layer are deposited over at least a portion of the wafer. Patterns are formed over desired contact locations of the memory material layer and etching is used to remove portions of the memory material layer. The etching step undercuts the patterns and forms memory elements having a protruding contact portion with an apex contact area. The pattern is removed, and an upper electrode is formed and electrically coupled to the contact area. Corresponding access devices and word/bit line conductor grids are provided and coupled to the memory cells.