This inventor holds 3 USPTO granted patents. Top assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation, Chinese Academy of Sciences. Active years: 2009-2019.
Company Filing History:
2 out of 947 
2 out of 1,748 
1 out of 3,334 
Years Active: 2009-2019
Title: Ru Ling Zhou: Innovator in Semiconductor Technology
Introduction
Ru Ling Zhou is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His innovative work focuses on phase change memory and semiconductor structures, showcasing his expertise in advanced fabrication methods.
Latest Patents
One of Ru Ling Zhou's latest patents is titled "Phase change memory and fabrication method thereof." This invention provides a novel approach to phase change memory, including a substrate, a heating layer, and a phase change layer that is in contact with one sidewall surface of the heating layer. Another significant patent is "Semiconductor structures and fabrication methods thereof." This patent outlines a method for fabricating semiconductor structures, which involves forming a plurality of fin structures on a substrate and creating doped regions with varying ion concentrations.
Career Highlights
Ru Ling Zhou has worked with notable companies in the semiconductor industry, including Semiconductor Manufacturing International Corporation in Shanghai and Beijing. His experience in these organizations has allowed him to develop and refine his innovative techniques in semiconductor fabrication.
Collaborations
Ru Ling Zhou has collaborated with several professionals in his field, including Chao B Zhang and Qing Feng Zhang. These collaborations have contributed to the advancement of semiconductor technologies and innovations.
Conclusion
Ru Ling Zhou's contributions to semiconductor technology through his patents and career achievements highlight his role as a leading inventor in the industry. His work continues to influence advancements in memory and semiconductor fabrication methods.