The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Mar. 13, 2018
Applicants:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Inventors:
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 47/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1286 (2013.01); H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/1293 (2013.01); H01L 45/144 (2013.01); H01L 45/1608 (2013.01); H01L 45/1625 (2013.01); H01L 45/1675 (2013.01);
Abstract
A phase change memory and a fabrication method are provided. The fabrication method includes: providing a substrate; forming a heating layer on the substrate; forming a phase change layer on and in contact with one sidewall surface of the heating layer. The phase change memory includes: a substrate; a heating layer on the substrate; and a phase change layer on and in contact with one sidewall surface of the heating layer.