The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Mar. 12, 2018
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Abstract
A method for fabricating a semiconductor structure is disclosed. The method includes providing a substrate and forming a plurality of fin structures on the substrate. Each fin structure includes a first side and a second side opposite to the first side. The method further includes forming a first doped region containing first doping ions in a portion of the substrate on the first side of each gate structure, and forming a second doped region containing second doping ions in a portion of the substrate on the second side of each gate structure. The ion concentration of the second doping ions in the second doped region is smaller than the ion concentration of the first doping ions in the first doped region, and the atomic weight of the second doping ions is smaller than the atomic weight of the first doping ions.