Tainan, Taiwan

Ru-Chin Tu


Average Co-Inventor Count = 4.9

ph-index = 5

Forward Citations = 57(Granted Patents)


Company Filing History:


Years Active: 2005-2007

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11 patents (USPTO):Explore Patents

Title: Ru-Chin Tu: Innovator in Gallium-Nitride Technology

Introduction

Ru-Chin Tu is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in gallium-nitride (GaN) devices. With a total of 11 patents to his name, Tu's work has advanced the capabilities of ultraviolet photo detectors and light-emitting diodes.

Latest Patents

One of his latest patents is a gallium-nitride based ultraviolet photo detector. This innovative structure includes an n-type contact layer, a light absorption layer, a light penetration layer, and a p-type contact layer, all made of aluminum-gallium-indium-nitride (AlGaInN) compound semiconductors. By varying the composition of aluminum, gallium, and indium, the photo detector achieves desired band gaps, making it highly responsive to specific ultraviolet wavelengths. Additionally, the layers maintain compatible lattice constants, avoiding excessive stress and ensuring high-quality epitaxial structures. Another notable patent is for a gallium-nitride based light-emitting diode structure that features high reverse withstanding voltage and anti-electrostatic discharge (ESD) capability. This structure incorporates an anti-ESD thin layer made of undoped indium-gallium-nitrides or low-band-gap aluminum-indium-gallium-nitrides, significantly enhancing the operational lifespan of GaN-based LEDs.

Career Highlights

Throughout his career, Ru-Chin Tu has worked with notable organizations such as Formosa Epitaxy Incorporation and the Industrial Technology Research Institute. His expertise in semiconductor technology has positioned him as a key figure in the development of advanced electronic devices.

Collaborations

Tu has collaborated with esteemed colleagues, including Liang-Wen Wu and Cheng-Tsang Yu. Their combined efforts have contributed to the advancement of gallium-nitride technology and its applications in various electronic devices.

Conclusion

Ru-Chin Tu's innovative work in gallium-nitride technology has led to significant advancements in the field of semiconductors. His contributions continue to influence the development of high-performance electronic devices, showcasing the importance of innovation in technology.

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