The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Jan. 22, 2005
Liang-wen Wu, Banciao, TW;
Ru-chin Tu, Tainan, TW;
Cheng-tsang Yu, Wufong Township, Taichung County, TW;
Tzu-chi Wen, Tainan, TW;
Fen-ren Chien, Yonghe, TW;
Liang-Wen Wu, Banciao, TW;
Ru-Chin Tu, Tainan, TW;
Cheng-Tsang Yu, Wufong Township, Taichung County, TW;
Tzu-Chi Wen, Tainan, TW;
Fen-Ren Chien, Yonghe, TW;
Formosa Epitaxy Incorporation, Taoyuan, TW;
Abstract
A structure for a gallium-nitride (GaN) based ultraviolet photo detector is provided. The structure contains an n-type contact layer, a light absorption layer, a light penetration layer, and a p-type contact layer, sequentially stacked on a substrate from bottom to top in this order. The layers are all made of aluminum-gallium-indium-nitride (AlGaInN) compound semiconductors. By varying the composition of aluminum, gallium, and indium, the layers, on one hand, can achieve the desired band gaps so that the photo detector is highly responsive to ultraviolet lights having specific wavelengths. On the other hand, the layers have compatible lattice constants so that problems associated with excessive stress are avoided and high-quality epitaxial structure is obtained. The structure further contains a positive electrode, a light penetration contact layer, and an anti-reflective coating layer on top of the p-type contact layer, and a negative electrode on the n-type contact layer.