The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
Nov. 16, 2004
Liang-wen Wu, Banciao, TW;
Ru-chin Tu, Tainan, TW;
Cheng-tsang Yu, Taichung, TW;
Tzu-chi Wen, Tainan, TW;
Fen-ren Chien, Yonghe, TW;
Liang-Wen Wu, Banciao, TW;
Ru-Chin Tu, Tainan, TW;
Cheng-Tsang Yu, Taichung, TW;
Tzu-Chi Wen, Tainan, TW;
Fen-Ren Chien, Yonghe, TW;
Formosa Epitaxy Incorporation, Taoyuan, TW;
Abstract
A gallium-nitride based light-emitting diode structure includes a digital penetration layer to raise its reverse withstanding voltage and electrostatic discharge. The digital penetration layer is formed by alternate stacking layers of AlInGaNP/AlInGaNP, wherein 0≦x,y,z,p,q,r≦1, and AlInGaNPhas an energy gap greater than that of AlInGaNP. The AlInGaNPlayers have increasing thickness and the AlInGaNPlayers have decreasing thickness.