The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Nov. 12, 2004
Liang-wen Wu, Banciao, TW;
Ru-chin Tu, Tainan, TW;
Cheng-tsang Yu, Wufong Township, Taichung County, TW;
Tzu-chi Wen, Tainan, TW;
Fen-ren Chien, Yonghe, TW;
Liang-Wen Wu, Banciao, TW;
Ru-Chin Tu, Tainan, TW;
Cheng-Tsang Yu, Wufong Township, Taichung County, TW;
Tzu-Chi Wen, Tainan, TW;
Fen-Ren Chien, Yonghe, TW;
Formosa Epitaxy Incorporation, Taoyuan, TW;
Abstract
A GaN-based LED structure is provided so that the brightness and lighting efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to the invention and the prior arts lies in the addition of a thin layer on top of the p-type contact layer within the traditional structure. The thin layer could be formed using silicon-nitride (SiN), or it could have a superlattice structure made of either SiN and undoped indium-gallium-nitride (InGaN), or SiN and undoped aluminum-gallium-indium-nitride (AlGaInN), respectively. Because of the use of SiN in the thin layer, the surfaces of the GaN-based LEDs would be micro-roughened, and the total internal reflection resulted from the GaN-based LEDs' higher index of refraction than the atmosphere could be avoided. The GaN-based LEDs according to the invention therefore have superior external quantum efficiency and lighting efficiency.