The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
Sep. 16, 2004
Liang-wen Wu, Banciao, TW;
Ru-chin Tu, Tainan, TW;
Cheng-tsang Yu, Wufong, TW;
Tzu-chi Wen, Tainan, TW;
Fen-ren Chien, Yonghe, TW;
Liang-Wen Wu, Banciao, TW;
Ru-Chin Tu, Tainan, TW;
Cheng-Tsang Yu, Wufong, TW;
Tzu-Chi Wen, Tainan, TW;
Fen-Ren Chien, Yonghe, TW;
Formosa Epitaxy Incorporation, Taoyuan, TW;
Abstract
Disclosed is a multi-quantum-well light emitting diode, which makes enormous adjustments and improvements over the conventional light emitting diode, and further utilizes a transparent contact layer of better transmittance efficiency, so as to significantly raise the illuminance of this light emitting diode and its light emission efficiency. The multi-quantum-well light emitting diode has a structure including: substrate, buffer layer, n-type gallium-nitride layer, active light-emitting-layer, p-type cladding layer, p-type contact layer, barrier buffer layer, transparent contact layer, and the n-type electrode layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile