The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2005
Filed:
May. 13, 2003
Shyi-ming Pan, Changhua, TW;
Jenq-dar Tsay, Taipei, TW;
Ru-chin Tu, Tainan, TW;
Jung-tsung Hsu, Hsinchu, TW;
Shyi-Ming Pan, Changhua, TW;
Jenq-Dar Tsay, Taipei, TW;
Ru-Chin Tu, Tainan, TW;
Jung-Tsung Hsu, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu Hsien, TW;
Abstract
The specification discloses a light-emitting diode and the corresponding manufacturing method. A GaN thick film with a slant surface is formed on the surface of a substrate. An epitaxial slant surface is naturally formed using the properties of the GaN epitaxy. An LED structure is grown on the GaN thick film to form an LED device. This disclosed method and device can simplify the manufacturing process. The invention further uses the GaN thick film epitaxial property to make various kinds of LED chips with multiple slant surfaces and different structures. Since the surface area for emitting light on the chip increases and the multiple slant surfaces reduce the chances of total internal reflections, the light emission efficiency of the invention is much better than the prior art.