Rossella Ranica

Title: The Innovative Contributions of Rossella Ranica

Introduction

Rossella Ranica is a prominent inventor based in Grenoble, France. She has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. Her work focuses on improving the performance and efficiency of integrated circuits and memory cells.

Latest Patents

One of her latest patents involves transistors with various levels of threshold voltages and the absence of distortions between nMOS and pMOS. This invention relates to an integrated circuit that comprises a semi-conducting substrate and first and second cells. Each cell includes first and second transistors of nMOS and pMOS type, featuring first and second gate stacks that include a gate metal. The design incorporates first and second ground planes under the transistors and an oxide layer extending between them. The gate metals of the nMOS and pMOS exhibit different work functions, which are crucial for optimizing performance. Another notable patent is for a memory cell comprising one MOS transistor with an isolated body that has improved read sensitivity. This memory cell is formed in a floating body region, enhancing its operational capabilities.

Career Highlights

Throughout her career, Rossella has worked with notable companies such as STMicroelectronics and the Commissariat à l'Énergie Atomique et aux Énergies Alternatives. Her experience in these organizations has allowed her to develop and refine her innovative ideas in semiconductor technology.

Collaborations

Rossella has collaborated with esteemed colleagues, including Alexandre Villaret and Pascale Mazoyer. These partnerships have contributed to her success and the advancement of her inventions.

Conclusion

Rossella Ranica's contributions to the field of semiconductor technology are noteworthy. Her innovative patents and collaborations highlight her role as a leading inventor in her domain.