The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Jun. 19, 2014
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Olivier Weber, Grenoble, FR;
Nicolas Planes, La Terrasse, FR;
Rossella Ranica, Saint Martin d'Hères, FR;
Commissariat à l'énergie atomique et aux énergies alternatives, Paris, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Abstract
The invention relates to an integrated circuit comprising a semi-conducting substrate and first and second cells. Each cell comprises first and second transistors of nMOS and pMOS type including first and second gate stacks including a gate metal. There are first and second ground planes under the first and second transistors and an oxide layer extending between the transistors and the ground planes. The gate metals of the nMOS and of a pMOS exhibit a first work function and the gate metal of the other pMOS exhibiting a second work function greater than the first work function. The difference between the work functions is between 55 and 85 meV and the first work function Wf1 satisfies the relation Wfmg−0.04−0.005*Xge<Wf1<Wfmg−0.03−0.005*Xge.