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Lagrangeville, NY, United States of America

Ronald W Knepper

USPTO Granted Patents = 15

Average Co-Inventor Count = 2.3

ph-index = 9

Forward Citations = 237(Granted Patents)


Location History:

  • Fishkill, NY (US) (1976)
  • La Grangeville, NY (US) (1976 - 1995)
  • Andover, MA (US) (2002)

Company Filing History:

goldMedal15 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 1976-2002

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15 patents (USPTO):
1. 6426905 - High speed DRAM local bit line sense amplifier (2002-07-30),
2. 5446312 - Vertical-gate CMOS compatible lateral bipolar transistor (1995-08-29),
3. 5371022 - Method of forming a novel vertical-gate CMOS compatible lateral bipolar (1994-12-06),
4. 5341023 - Novel vertical-gate CMOS compatible lateral bipolar transistor (1994-08-23),
5. 5194397 - Method for controlling interfacial oxide at a (1993-03-16),
6. 4922455 - Memory cell with active device for saturation capacitance discharge (1990-05-01),
7. 4651302 - Read only memory including an isolation network connected between the (1987-03-17),
8. 4462091 - Word group redundancy scheme (1984-07-24),
9. 4460984 - Memory array with switchable upper and lower word lines (1984-07-17),
10. 4350991 - Narrow channel length MOS field effect transistor with field protection (1982-09-21),
11. 4093875 - Field effect transistor (FET) circuit utilizing substrate potential for (1978-06-06),
12. 4078947 - Method for forming a narrow channel length MOS field effect transistor (1978-03-14),
13. 4071783 - Enhancement/depletion mode field effect transistor driver (1978-01-31),
14. 3961355 - Semiconductor device having electrically insulating barriers for surface (1976-06-01),
15. 3938008 - Common bus driver complementary protect circuit (1976-02-10),

As a client on idiyas.com, I will now create an article about the inventor Ronald W Knepper based on the given data.

Title: The Innovations of Ronald W Knepper: Revolutionizing the Field of Electronics

Introduction: Ronald W Knepper, a prolific inventor based in Lagrangeville, NY, has made significant contributions to the field of electronics with his groundbreaking patents.

Latest Patents: Among his impressive portfolio of 15 patents, two notable inventions stand out. The first is the "High-speed DRAM Local Bit Line Sense Amplifier," a circuit designed to enhance the speed and efficiency of data sensing in one-transistor DRAM memory cells. The second innovation is the "Vertical-Gate CMOS Compatible Lateral Bipolar Transistor," which features a unique design suitable for silicon on insulator substrates.

Career Highlights: Ronald W Knepper's innovative spirit shines through in his tenure at IBM, where he continues to drive technological advancements. With a focus on high-speed circuitry and vertical transistors, Knepper's work has paved the way for future developments in the electronics industry.

Collaborations: In his groundbreaking research, Ronald W Knepper has collaborated with esteemed colleagues such as Chang-Ming Hsieh and Louis L Hsu. Together, they have worked on cutting-edge projects that push the boundaries of innovation.

Conclusion: Ronald W Knepper's remarkable achievements as an inventor underscore his commitment to driving progress in the field of electronics. With a keen eye for detail and a passion for technological innovation, he continues to inspire future generations of inventors.

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