Location History:
- Fishkill, NY (US) (1976)
- La Grangeville, NY (US) (1976 - 1995)
- Andover, MA (US) (2002)
Company Filing History:
Years Active: 1976-2002
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Title: The Innovations of Ronald W Knepper: Revolutionizing the Field of Electronics
Introduction: Ronald W Knepper, a prolific inventor based in Lagrangeville, NY, has made significant contributions to the field of electronics with his groundbreaking patents.
Latest Patents: Among his impressive portfolio of 15 patents, two notable inventions stand out. The first is the "High-speed DRAM Local Bit Line Sense Amplifier," a circuit designed to enhance the speed and efficiency of data sensing in one-transistor DRAM memory cells. The second innovation is the "Vertical-Gate CMOS Compatible Lateral Bipolar Transistor," which features a unique design suitable for silicon on insulator substrates.
Career Highlights: Ronald W Knepper's innovative spirit shines through in his tenure at IBM, where he continues to drive technological advancements. With a focus on high-speed circuitry and vertical transistors, Knepper's work has paved the way for future developments in the electronics industry.
Collaborations: In his groundbreaking research, Ronald W Knepper has collaborated with esteemed colleagues such as Chang-Ming Hsieh and Louis L Hsu. Together, they have worked on cutting-edge projects that push the boundaries of innovation.
Conclusion: Ronald W Knepper's remarkable achievements as an inventor underscore his commitment to driving progress in the field of electronics. With a keen eye for detail and a passion for technological innovation, he continues to inspire future generations of inventors.