The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 1978
Filed:
Jan. 31, 1977
Ronald William Knepper, La Grangeville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Disclosed is a field effect transistor (FET) circuit utilizing three sources of potential, the third source of potential being derived from the substrate. An input stage, connected between first and second sources of potential, is adapted to receive a logic input signal approximating said first and second sources of potential. An output stage connected between the first source of potential and a third source of potential, is adapted to provide a logical output signal approximating said first and third sources of potential. The third source of potential, which is derived from the substrate, provides a potential level suitable for turning off depletion mode FET devices.