The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1993
Filed:
Jun. 05, 1991
Robert K Cook, Poughkeepsie, NY (US);
Ronald W Knepper, Lagrangeville, NY (US);
Subodh K Kulkarni, Fishkill, NY (US);
Russell C Lange, Newburgh, NY (US);
Paul A Ronsheim, Wappingers Falls, NY (US);
Seshadri Subbanna, Hopewell Junction, NY (US);
Manu J Tejwani, Yorktown Height, NY (US);
Bob H Yun, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of controlling the interfacial oxygen concentration of a monocrystalline/polycrystalline emitter includes the steps of: passivating the monocrystalline silicon surface by immersing the wafer in a diluted HF acid solution; transferring the wafer into a high vacuum environment; heating the wafer to between 400.degree. and 700.degree. C.; exposing the monocrystalline silicon surface to a gas having a partial pressure of oxygen of between 10.sup.-5 to 1 Torr for between 1 and 100 minutes; and, depositing polysilicon onto the monocrystalline silicon surface.