Subodh K Kulkarni

Title: Innovations by Subodh K Kulkarni

Introduction

Subodh K Kulkarni is a notable inventor based in Fishkill, NY (US). He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches.

Latest Patents

His latest patents include a method for controlling interfacial oxide and a process for forming air-filled isolation trenches in a semiconductor substrate. The first patent describes a method of controlling the interfacial oxygen concentration of a monocrystalline/polycrystalline emitter. This method involves passivating the monocrystalline silicon surface by immersing the wafer in a diluted HF acid solution, transferring the wafer into a high vacuum environment, heating it to between 400°C and 700°C, exposing the surface to a gas with a partial pressure of oxygen, and depositing polysilicon onto the surface. The second patent outlines a process for creating air-filled isolation trenches using conformal chemical vapor deposition (CVD) of a silicon dioxide layer over a passivated semiconductor substrate. This process includes forming intersecting trenches, partially filling them with removable materials, and etching back the CVD silicon dioxide to create openings.

Career Highlights

Subodh K Kulkarni is associated with the International Business Machines Corporation (IBM), where he has been able to apply his expertise in semiconductor technology. His work has contributed to advancements in the field, particularly in the development of innovative methods for semiconductor fabrication.

Collaborations

He has collaborated with notable coworkers such as Klaus D Beyer and Louis L Hsu, further enhancing the innovative environment at IBM.

Conclusion

Subodh K Kulkarni's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His innovative methods continue to influence advancements in semiconductor fabrication.