The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2002
Filed:
Feb. 07, 2001
Robert H. Dennard, New Rochelle, NY (US);
Ronald W. Knepper, Andover, MA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Disclosed is a high speed sense amplifier circuit designed for sensing data in one-transistor DRAM memory cells on bit lines within DRAM macros. The circuit utilizes a charge transfer scheme to rapidly remove charge from a small sensing first capacitor C generating a voltage swing delta V via an FET operating in its subthreshold region by means of idling current, such transfer supplying an equal charge to the larger bit line capacitance Cb with small voltage swing delta Vb The sense amp is pre-charged to the “1” state, and senses a “0” via the charge transfer operation thusly described. A “1” is sensed when no charge transfer takes place.