Ronald W Brower

Title: Innovations by Ronald W. Brower

Introduction

Ronald W. Brower is a notable inventor based in Dayton, OH, with a significant contribution to the field of semiconductor technology. He holds a total of six patents, showcasing his expertise and innovative spirit in the development of advanced CMOS processes.

Latest Patents

One of his latest patents is titled "Polysilicon-doped-first CMOS process." This patent discloses a process for forming self-aligned polysilicon gates and interconnecting conductors with a single conductivity and single impurity type in CMOS integrated circuits. The process involves forming a polysilicon layer over the gate oxide, doping it with n-type impurities, and then covering it with a thick oxide that serves as an implantation mask. The gates and conductors are patterned, and ion implantation is used to form the sources and drains for the p-FET and n-FET in a self-aligned relationship with the corresponding gates.

Another significant patent is "Silicon nitride S/D ion implant mask in CMOS device fabrication." This patent describes a coplanar CMOS process for fabricating self-aligned gate FETs using high energy, high dose rate ion implants to form the source and drain regions. The process includes defining gate electrodes and source/drain regions, forming selectively prescribed thicknesses of silicon dioxide, and depositing silicon nitride layers to protect the n-channel FETs during the ion implant step.

Career Highlights

Ronald W. Brower is currently employed at NCR Corporation, where he continues to innovate and contribute to the field of semiconductor technology. His work has had a lasting impact on the development of CMOS processes, enhancing the efficiency and performance of integrated circuits.

Collaborations

Throughout his career, Ronald has collaborated with notable colleagues such as Roberto Romano-Moran and Samuel Y. Chiao. These collaborations have further enriched his work and contributed to advancements in semiconductor technology.

Conclusion

Ronald W. Brower is a distinguished inventor whose contributions to CMOS technology have paved the way for advancements in the semiconductor industry. His innovative patents reflect his commitment to enhancing integrated circuit design and fabrication processes.