The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 1980
Filed:
Nov. 20, 1978
Ronald W Brower, Dayton, OH (US);
NCR Corporation, Dayton, OH (US);
Abstract
A process for forming a CIS (conductor-insulator-semiconductor) integrated circuit having one or more non-memory field-effect transistors, and one or more polysilicon resistors and/or polysilicon conductors. A single mask and implant sequence is used to establish the threshold voltage of the field-effect transistor and the resistance (conductance) of the polysilicon components. The polysilicon components are formed to predetermined sizes, as needed, so that the threshold-determining implant provides the desired polysilicon resistance value(s).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile