The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 1979
Filed:
Feb. 22, 1978
Applicant:
Inventors:
Ronald W Brower, Dayton, OH (US);
Jerome Cohen, Centerville, OH (US);
Peter C Chen, Sunnyvale, CA (US);
Assignee:
NCR Corporation, Dayton, OH (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
430313 ; 156657 ; 156662 ; 156668 ; 204164 ; 427 38 ; 427 93 ; 427294 ; 427399 ; 156643 ; 1566591 ;
Abstract
An adhesion-enhancing technique for preparing the surface of a polycrystalline silicon body to receive organic photoresist. In an exemplary procedure, the polysilicon is placed in an oxygen plasma chamber operating under rf power of about 90 milliwatts per cubic centimeter of chamber volume and a pressure of approximately 1 torr for 10 minutes to form an adhesion-enhancing oxide monolayer on the polysilicon.