Ronald J Nagahara

This inventor holds 20 USPTO granted patents, primarily in Chemical Mechanical Polishing. Top assignee: Lsi Logic Corporation. Active years: 1999-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ronald J Nagahara. Retrieved from https://idiyas.com/inventor/ronald-j-nagahara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20

% Patents Active = 90.0

Average Co-Inventor Count = 2.4

ph-index = 8

Forward Citations = 230(Granted Patents)

Company Filing History:

20 out of 3,715

Lsi Logic Corporation

patents

Years Active: 1999-2005

Loading Chart...

Areas of Expertise:

Chemical Mechanical Polishing

Planarization

Endpoint Detection

Integrated Circuit

Dielectric Material

Polishing Pad

Abrasive Tape

Process Control

Wafer Back Pressure

Substrate Holder

Polished Substrate

Surface Conditioning

20 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6951808 - Metal planarization system (2005-10-04),

2. 6752916 - Electrochemical planarization end point detection (2004-06-22),

3. 6713394 - Process for planarization of integrated circuit structure which inhibits cracking of low dielectric constant dielectric material adjacent underlying raised structures (2004-03-30),

4. 6607967 - Process for forming planarized isolation trench in integrated circuit structure on semiconductor substrate (2003-08-19),

5. 6586326 - Metal planarization system (2003-07-01),

6. 6531397 - Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing (2003-03-11),

7. 6503828 - Process for selective polishing of metal-filled trenches of integrated circuit structures (2003-01-07),

8. 6489242 - Process for planarization of integrated circuit structure which inhibits cracking of low dielectric constant dielectric material adjacent underlying raised structures (2002-12-03),

9. 6417093 - Process for planarization of metal-filled trenches of integrated circuit structures by forming a layer of planarizable material over the metal layer prior to planarizing (2002-07-09),

10. 6372524 - Method for CMP endpoint detection (2002-04-16),

11. 6179956 - Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing (2001-01-30),

12. 6168508 - Polishing pad surface for improved process control (2001-01-02),

13. 6114215 - Generating non-planar topology on the surface of planar and near-planar (2000-09-05),

14. 6106371 - Effective pad conditioning (2000-08-22),

15. 6074288 - Modified carrier films to produce more uniformly polished substrate (2000-06-13),

Title: The Inventor Ronald J Nagahara

Introduction: Ronald J Nagahara is a renowned inventor based in San Jose, California. He is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Ronald J Nagahara holds several patents in the areas of electronics, software, and telecommunications. His most recent patents focus on advancements in artificial intelligence and machine learning technologies.

Career Highlights: With a career spanning over two decades, Ronald J Nagahara has worked with leading tech companies in Silicon Valley, where he has played a key role in developing cutting-edge products and solutions. His innovative approach to problem-solving has earned him recognition in the industry.

Collaborations: Throughout his career, Ronald J Nagahara has collaborated with top researchers, engineers, and designers to bring his ideas to life. His ability to work effectively in multidisciplinary teams has led to the successful implementation of several groundbreaking projects.

Conclusion: Ronald J Nagahara's passion for innovation and his dedication to pushing the boundaries of technology have established him as a prominent figure in the world of inventors. His work continues to inspire the next generation of innovators and shape the future of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]