Fremont, CA, United States of America

Rohit Sudhir Shenoy

This inventor holds 26 USPTO granted patents and 4 published patent applications and 3 EPO patents, primarily in 3D NAND Memory. Top assignees: Intel Corporation, International Business Machines Corporation, Intel Ndtm US LLC. Active years: 2008-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rohit Sudhir Shenoy. Retrieved from https://idiyas.com/inventor/rohit-sudhir-shenoy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 

% Patents Active = 80.8

 

Average Co-Inventor Count = 3.4

ph-index = 5

Forward Citations = 96(Granted Patents)


Company Filing History:


Years Active: 2008-2026

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Areas of Expertise:
3D NAND Memory
SSD Defects
Read Window Optimization
Power Efficiency
Error Correction
Memory Device
Voltage Modulation
High-Density Arrays
Programming Techniques
Non-Volatile Memory
Synapse Learning
Temperature Management
26 patents (USPTO):Explore Patents

Title: Inventor Rohit S. Shenoy: Innovating Memory Device Technologies

Introduction

Rohit S. Shenoy, an accomplished inventor located in Fremont, CA, has made significant strides in the field of memory device technologies. With three patents to his name, his work primarily focuses on improving the performance and reliability of non-volatile memory devices.

Latest Patents

Shenoy's most recent patents include groundbreaking inventions that address critical issues within memory systems. The first patent, titled "Method and apparatus for improving write uniformity in a memory device," presents an innovative apparatus featuring a group of memory cells coupled to a wordline. This invention optimizes the programming of memory cells by allowing the controller to skip programming certain pages in response to sequential write operations, enhancing write uniformity.

His second patent, "Overcoming error correction coding mis-corrects in non-volatile memory," tackles a vital issue in data integrity. It describes a method to detect and mitigate silent data corruption caused by mis-corrected reads in error correction coding (ECC). By utilizing a read signature to identify anomalies in the ECC process, Shenoy's invention aims to prevent the distortion of data, thereby ensuring the reliability of non-volatile memory devices.

Career Highlights

Shenoy has developed his expertise while working with prestigious companies such as Intel Corporation and Intel NDTM US LLC. His tenure at these organizations has allowed him to contribute valuable insights and advancements in memory technology, reinforcing his status as a leading expert in the field.

Collaborations

During his career, Rohit Shenoy has collaborated with talented professionals such as Pranav Kalavade and Arash Hazeghi. These partnerships have fostered an environment of innovation, driving forward the development of crucial technologies in the rapidly evolving landscape of memory devices.

Conclusion

As a pioneer in memory technology, Rohit S. Shenoy continues to break new ground with his inventions and patents. His dedication to improving memory device performance exemplifies the spirit of innovation, making him a noteworthy figure in the realm of modern technology. With each patent, Shenoy contributes to the ongoing evolution of memory systems, paving the way for future advancements in this critical area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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