Location History:
- El Dorado Hills, CA (US) (2003)
- Folsom, CA (US) (1996 - 2017)
Company Filing History:
Years Active: 1996-2017
Title: The Innovations of Robert L Baltar
Introduction
Robert L Baltar is a prominent inventor based in Folsom, CA (US). He has made significant contributions to the field of memory devices, holding a total of 14 patents. His work focuses on enhancing the performance and reliability of memory technology.
Latest Patents
One of his latest patents is titled "Wear leveling for a memory device." This patent outlines methods of operating a memory device that are useful in managing wear leveling operations. The methods include receiving an instruction from a host device, which comprises a command portion indicating a desire to identify portions of the memory device to be excluded from wear leveling operations. Additionally, it involves storing information identifying a particular group of blocks to be excluded from wear leveling operations. Another patent under the same title discusses memory devices and methods to facilitate wear leveling operations. In this method, specific blocks of memory cells are excluded from experiencing wear leveling operations, allowing users to select blocks of memory to be excluded based on their needs.
Career Highlights
Throughout his career, Robert has worked with leading technology companies, including Intel Corporation and Micron Technology Incorporated. His experience in these organizations has allowed him to develop innovative solutions that address critical challenges in memory technology.
Collaborations
Robert has collaborated with notable professionals in the field, including Ritesh B Trivedi and Mark E Bauer. These collaborations have contributed to the advancement of memory device technologies.
Conclusion
Robert L Baltar's contributions to memory device technology through his patents and collaborations highlight his role as an influential inventor in the industry. His innovative methods for wear leveling operations continue to impact the performance of memory devices.