Pendleton, OR, United States of America

Robert D Norman

USPTO Granted Patents = 229 

Average Co-Inventor Count = 1.6

ph-index = 51

Forward Citations = 11,093(Granted Patents)


Inventors with similar research interests:


Location History:

  • Santa Clara, CA (US) (1998 - 2003)
  • Blaine, WA (US) (2005 - 2012)
  • Sunnyvale, CA (US) (2015)
  • San Jose, CA (US) (1993 - 2017)
  • Lansing, IL (US) (2020)
  • Pendleton, OR (US) (2008 - 2024)

Company Filing History:


Years Active: 1993-2025

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229 patents (USPTO):

Title: Robert D Norman: Innovative Mind Driving Advancements in Memory Circuits

Introduction:

Robert D Norman, a prolific inventor hailing from Pendleton, Oregon, has made significant contributions to the field of memory circuits. With a total of 195 patents under his belt, Norman has demonstrated a unique ability to push the boundaries of technology and provide valuable solutions to memory-related challenges. This article will delve into his latest patents, career highlights, collaborations, and shed light on his remarkable contributions to the industry.

Latest Patents:

Norman's recent patents showcase his expertise in developing memory circuit architectures that prioritize high capacity and low effective latency. One such patent, titled "High capacity memory circuit with low effective latency," involves wafer bonding a first circuit containing quasi-volatile or non-volatile memory circuits to a second circuit comprised of fast memory circuits and logic circuits. This innovative approach allows for improved performance by leveraging the low read latencies of the second circuit. The patent encompasses various memory circuit types, including SRAM, DRAM, eDRAM, MRAM, and eMRAM.

In another patent titled "Quasi-volatile system-level memory," Norman presents a novel architecture for building high-capacity system memory. This design combines quasi-volatile memory circuits, logic circuits, and SRAM circuits, using the latter as buffers or cache for the quasi-volatile memory circuits. This configuration enables the system memory to achieve access latency levels comparable to SRAM circuits, making it suitable for code memory purposes. Additionally, the system memory can perform direct memory access (DMA) operations and includes an arithmetic logic unit for computational memory tasks. This patent also highlights the ability to support multi-channel memory accesses by multiple host processors.

Career Highlights:

Throughout his career, Norman has been associated with notable companies in the industry. He contributed his expertise to Unity Semiconductor Corporation, a company dedicated to developing revolutionary non-volatile memory technologies. Norman's inventive thinking and technical prowess also found a home at SanDisk Technologies Inc. (now part of Western Digital Corporation), renowned for its advancements in flash memory and data storage solutions.

Collaborations:

Norman has had the privilege of collaborating with visionary individuals who share his passion for innovation in the memory circuit domain. Notably, he has worked alongside trailblazers like Sanjay Mehrotra and Eliyahou Harari. Sanjay Mehrotra, Co-Founder of SanDisk Technologies Inc., played a pivotal role in driving the flash memory industry forward. Eliyahou Harari, another formidable collaborator, co-founded SanDisk and made significant contributions to the development of flash memory technology.

Conclusion:

Robert D Norman's exceptional contributions to the field of memory circuits have paved the way for groundbreaking advancements in technology. With a remarkable portfolio of 195 patents, Norman has consistently demonstrated his ability to develop innovative solutions that balance high memory capacity and low effective latency. Through collaborations with industry visionaries like Sanjay Mehrotra and Eliyahou Harari, Norman's impact has been amplified, leading to lasting changes in the way memory circuits are designed and utilized. As the industry continues to evolve, Norman's inventive spirit and dedication to technological progress will undoubtedly shape the future of memory-centric innovations.

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